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| SI9435DY January 2001 SI9435DY P-Channel Logic Level PowerTrench MOSFET General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features * -5.3 A, -30 V. RDS(ON) = 50 m @ VGS = -10 V RDS(ON) = 80 m @ VGS = -4.5 V * Low gate charge * Fast switching speed * High performance trench technology for extremely low RDS(ON) * High power and current handling capability Applications * DC/DC converter * Load switch * Motor Drive D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25oC unless otherwise noted Parameter Ratings -30 20 (Note 1a) Units V V A W -5.3 -20 2.5 1.2 1.0 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range C Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 C/W C/W Package Marking and Ordering Information Device Marking 9435 Device SI9435DY Reel Size 13'' Tape width 12mm Quantity 2500 units 2001 Fairchild Semiconductor International SI9435DY Rev A(W) SI9435DY Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSSF IGSSR TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = -250 A ID = -250 A, Referenced to 25C VDS = -24 V, VGS = 20 V, VGS = -20 V, VGS = 0 V VDS = 0 V VDS = 0 V Min -30 Typ Max Units V Off Characteristics -22 -1 100 -100 mV/C A nA nA On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = -250 A ID = -250 A, Referenced to 25C VGS = -10 V, ID = -5.3 A VGS = -10 V, ID = -5.3 A, TJ=125C VGS = -4.5 V, ID = -4.2A, VGS = -10 V, VDS = -15 V, VDS = -5 V ID = -5.3 A -1 -1.7 4 38 54 55 -3 V mV/C 50 79 80 m ID(on) gFS -20 12 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = -15 V, f = 1.0 MHz V GS = 0 V, 690 306 77 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -15 V, VGS = -10 V, ID = -1 A, RGEN = 6 7 10 19 11 14 18 34 20 23 ns ns ns ns nC nC nC VDS = -15 V, VGS = -10 V ID = -5.3 A, 14 2.4 4.8 Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = -5.3 A Voltage -5.3 (Note 2) A V -0.86 -1.2 Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50C/W when 2 mounted on a 1in pad of 2 oz copper b) 105C/W when 2 mounted on a .04 in pad of 2 oz copper c) 125C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% SI9435DY Rev A(W) SI9435DY Typical Characteristics 30 VGS = -10.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.5 VGS = -3.5V 2 -4.0V 1.5 -4.5V -5.5V -7.0V 1 -10.0V 25 20 15 10 5 0 0 -7.5V -6.5V -6.0V -5.0V -4.0V -3.0V 1 2 3 4 5 0.5 0 5 10 15 -ID, DRAIN CURRENT (A) -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.2 1.6 ID = -5.3A VGS = -10V ID = -5.3A 1.4 0.15 1.2 0.1 1.0 0.05 0.8 TA = 125 C TA = 25 C o o 0.6 -50 -25 0 25 50 75 100 o 0 125 150 2 4 6 8 10 TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 20 VDS = -10V 16 TA = -55 C 125 C o o Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 25 C 10 o VGS = 0V 12 1 TA = 125 C 25 C o o 8 0.1 -55 C o 4 0.01 0 1 2 3 4 5 0.001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. SI9435DY Rev A(W) SI9435DY Typical Characteristics 10 ID = -5.3A VDS = -5V 8 -15V 6 -10V 1000 f = 1 MHz VGS = 0 V 800 CISS 600 COSS 4 400 2 200 CRSS 0 0 5 10 15 0 0 5 10 15 20 25 30 Qg, GATE CHARGE (nC) -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 RDS(ON) LIMIT 10 100s 1ms 10ms 100ms 1s 1 VGS = -10V SINGLE PULSE RJA = 125 C/W TA = 25 C 0.01 0.1 1 10 100 0 o o Figure 8. Capacitance Characteristics. 50 SINGLE PULSE RJA = 125C/W TA = 25C 40 30 10s DC 20 0.1 10 0.001 0.01 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 0.2 RJA(t) = r(t) + RJA 0.1 0.05 0.02 0.01 SINGLE PULSE 0.1 RJA = 125 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 o 0.01 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. SI9435DY Rev A(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST DISCLAIMER FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G |
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